Germany – Semiconductors – Plasma-Ätzanlage - PR1241915-2270-W — Fraunhofer-Gesellschaft, Einkauf B12 (DEU)

not-val law-enf -1 RES-0001 selec-w TEN-0001 tenders 1 t-esubm 1 t-sme 1 t-oth-eea 0 t-no-eea 0 CON-0001 LOT-0000 win-ten-val law-enf TEN-0001 -1 no TPA-0001 LOT-0000 TEN-0001 CON-0001 2026-09-15+02:00 CON-0001 TEN-0001 TPA-0001 ORG-0001 29 false false https://vergabe.fraunhofer.de/ ORG-7001 Fraunhofer-Gesellschaft, Einkauf B12 Hansastraße 27c München 80686 DE212 DEU DE 129515865 Einkauf Wissenschaftliche Geräte +49891205-0 einkauf@zv.fraunhofer.de ORG-7004 Vergabekammern des Bundes Kaiser-Friedrich-Straße 16 Bonn 53113 DEA22 DEU t:022894990 +49 228 9499-0 vk@bundeskartellamt.bund.de https://www.fraunhofer.de ORG-7005 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hansastraße 27c München 80686 DE212 DEU DE-129515865 +49 89 1205-0 einkauf@zv.fraunhofer.de false UBO-0001 small ORG-0001 HQ-Dielectrics GmbH Postfach 49 Dornstadt 89156 DE145 DEU DE268025856 +49 7348-204825 +49 7348-204928 info@hq-dielectrics.eu ORG-7006 Datenservice Öffentlicher Einkauf (in Verantwortung des Beschaffungsamts des BMI) Bonn 53119 DEA22 DEU 0204:994-DOEVD-83 +49228996100 noreply.esender_hub@bescha.bund.de UBO-0001 00644382-2026 181/2026 2026-09-18+02:00 2.3 eforms-sdk-1.13 eforms-sdk-1.13 a10edbef-7a88-42db-a298-313aa122c0c1 86c31d10-c294-4230-b79b-0827972738a0 2026-09-17+02:00 09:08:29+02:00 01 2026-09-17+02:00 32014L0024 can-standard DEU https://vergabe.fraunhofer.de/NetServer/ pub-undert gen-pub ORG-7001 ted-esen ORG-7006 vgv neg-wo-call false other-exclusive Wegen des Schutzes ausschließlicher Rechte ist kein Wettbewerb vorhanden, so dass ein Verhandlungsverfahren ohne Teilnahmewettbewerb mit nur einem Bieter auf der Grundlage des § 14 Abs. 4 Nr. 2 lit. c) VgV durchgeführt wird. PR1241915-2270-W Plasma-Ätzanlage - PR1241915-2270-W Plasma-Ätzanlage supplies 31712330 München 80686 DE21H DEU LOT-0000 false false no-eu-funds per-exa 100.00 price Preis Preis ORG-7001 ORG-7005 ORG-7004 true false none none LOT-0000 Plasma-Ätzanlage - PR1241915-2270-W Many areas of semiconductors, MEMS, and 3D integration technologies - such as microfluidics, physical, optical, and chemical sensors, and emerging quantum mechanical devices such as so-called Qubits and their integration into silicon substrates - utilize the excellent properties of silicon. In particular, high-precision structuring methods have been developed for these applications. Micro- and nanochannels, membranes, valves, cantilevers, and through-silicon vias are manufactured using Si deep reactive ion etching (Si-DRIE) technology.

As a standard etching gas, SF6 is employed in Silicon Deep Reactive Ion Etching (Si-DRIE) processes. SF6 is a potent greenhouse gas with a high global warming potential (GWP) of 25.300 CO2-equivalents. Although the semiconductor industry currently benefits from an exemption regarding SF6 usage, the duration of this exemption remains uncertain. Consequently, the identification of alternative gases to replace SF6 is becoming more important. One promising alternative is F2 gas mixtures. However, their implementation requires specialized modifications to both gas infrastructure and process kits.

Hence, in addition to its fluorine compatibility, the requirements for the novel etching system should include scalability and a minimized process chamber volume compared to conventional plasma etching systems. This reduction in chamber volume decreases the total gas flow required, thereby enabling nearly complete gas utilization while minimizing gas-wall interactions. Consequently, faster gas switching times can be achieved in Bosch processes.

A key feature of this new developed etching system is its "Green Production" concept, which focuses on the minimization and prevention of environmentally harmful gases. Furthermore, the system enables straightforward scaling of substrate sizes from 150 mm to 200 mm. supplies none 31712330 München 80686 DE21H DEU 2027-07-19+02:00 2027-07-23+02:00 2000-01-01+01:00

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