Analysis of Electronic Parameters and Interface States of Boron Dispersed Triethanolamine/P-si Structure by Afm, I-V, C-V and G/?-v-f Techniques

The electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I-V, C-V-f and G/ω-V-f techniques. The surface topography and phase image of the TEA-B film deposited onto p-Si substrate were analyzed by ato