arXiv (All)
open access
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Atomically thin transition-metal dichalcogenides, such as MoS2, offer a promising route to surpass the scaling limits of silicon owing to their excellent electrostatic control and resilience to short-channel effects. Realizing this potential depends critically on gate-stack engineering, where strong
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Alkali co-adsorption enhances bond-resolved N2 activation at O2-active MoS2 single-atom sites#454708
- Screening of Coulomb Interactions in MoS2 Nanoribbons: Enhanced Coulomb interactions, Antiscreening, and Edge Magnetism#1141866
- Coulomb-mediated interactions of charge-transfer excitons in TMD lateral heterostructures#1105073
- Impact of Sapphire Substrate Reconstruction on the Structural, Electronic, and Photonic Properties of MoS(2).#165820
- Dynamic structural evolution of 2D/3D MoS 2 @Ni heterostructure supported on SBA-15 during CO 2 RWGS reaction#330124
Record · ID 1034245
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive