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Field-free and Sub-ns Magnetization Reversal in Synthetic Anti-ferromagnets using Sequential Spin-Orbit Torque and Spin-Transfer Torque Pulses
Single free-layer Magnetic Tunnel Junctions (MTJs) with a perpendicular easy axis driven by spin currents have demonstrated fast, deterministic switching, non-volatility, and low-power memory capabilities when integrated with modern nanoelectronic devices. In this article, we numerically investigate
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