Multivalley 3D Electronic Structure of PbSe from Soft-X-Ray ARPES and First-Principles Calculations

PbSe is a narrow-gap IV-VI semiconductor, whose multivalley valence bands, with maxima at the L, $Σ$, and $Δ$ points, underpin its intermediate-temperature thermoelectric properties. We combine soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) with first principles simulations to study