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Sub-Thermionic Switching in a Negative-Capacitance Bandgap-Change Field-Effect Transistor
Overcoming the approximately 60~mV/dec Boltzmann limit of the subthreshold swing remains a central challenge for low-power nanoelectronics. Negative-capacitance field-effect transistors address it by amplifying the channel potential, but their effectiveness is constrained by capacitance matching and
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