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Investigation of Hopping Conduction and Its Impact on the Subthreshold and Transition Region Transport in Oxide Semiconductor Transistors by Magneto-Transport Measurements

Wang, Chen et al.
arXiv (All) · Papers
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materials-science
In this work, magneto-transport measurements, including Hall effects and magnetoresistance (MR) at various temperatures, are employed to directly probe the electron transport properties in crystalline indium oxide (In2O3) and amorphous indium-zinc oxide (IZO) transistors. For the first time, we deve
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