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PRISM-UDE: Physics-Regularized Iterative Symbolic Modeling of 3nm FinFETs via Universal Differential Equation

Balamurali, Pranavanath et al.
arXiv (OAI Expanded) · Papers
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emerging-technologies
Compact transistor models are the mathematical backbone of circuit simulation. However, at advanced nodes such as 3nm, transport physics becomes too complex for traditional hand-derived equations to capture accurately. Purely data-driven neural surrogates, on the other hand, are numerically unstable
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