arXiv (OAI Expanded)
open access
Transverse-Anderson localization of light in disordered silicon pores
Transverse light localization of Anderson type through disorders has made intriguing fundamental topics. Toward this, we found that in the disordered porous Si (PSi) a nearly "zero reflection" (from 450 to 900 nm) can be observed. The localization length versus disorder parameter is experimentally v
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Effect of Fly Ash and Calcite on Coloration, Thermal Conductivity, and Acoustic Performance of Sealant Silicone#656619
- Nonlocality of Quantum States can be Transitive#128333
- Enhanced many-body quantum scars from the non-hermitian fock skin effect#274777
- Revealing quantum geometry of solids through vacuum fluctuations#821784
- Hole-Carrier-Dominant Transport in 2D Single-Crystal Copper#374921
Record · ID 1071269
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive