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Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature
Carbon nanotube field-effect transistors (CNTFETs) are promising for monolithic 3D integration with silicon CMOS circuits in back-end-of-line (BEOL) processes. Further reduction in off-state leakage is essential for practical applications. In this study, we develop a low-temperature cleaning process
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