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Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model
Surface roughness (SR) scattering in inversion layers of bulk-MOSFETs is studied from the atomistic and quantum-mechanical viewpoints. Contrary to the usual macroscopic landscape of the roughness deviation, we introduce a stochastic deviation at each atomic site to take account of the discontinuity
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