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Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach
In experimental studies, increasing the ratio of source gases (C3H8/SiH4; C/Si ratio) for chemical vapor deposition (CVD) causes the growth rate to increase monotonically, and nitrogen incorporation tends to decrease accordingly; however, a unique phenomenon has been observed in which nitrogen incor
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