Sulphurization of In thin films using Bi2S3 and Sb2S3 and self-organized fabrication of In2S3 nanodots by electrochemical etching

Thin In films are exposed to the vapor of Sb2S3 and Bi2S3 at high temperatures for sulphurization. The release of Sb and Bi in the reaction alters the properties of the synthesized β-In2S3 films by introducing surfactant effects. For using Sb2S3, the texture of the films is not sensitive to the sulp