Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range

This work explores the role of implantation depth in suppressing bipolar degradation of 4H-SiC PiN diodes through proton implantation. Targeting depths aligned with active basal plane dislocations (BPDs) effectively reduces stacking-fault expansion, as confirmed by electroluminescence imaging [1,2].