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Engineering Ferromagnetism in Wide Bandgap w-AlN for Spintronic Applications: Insights from DFT Calculations
Spintronics drives the search for functional materials, pursuing room-temperature dilute magnetic semiconductors to realize practical, energy-efficient devices. This paper presents a theoretical investigation into the magnetic properties of w-AlN doped with Cr, Ru, and Rh atoms, using spin-polarized
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