arXiv (All)
open access
Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions
HfO$_2$-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance ratio (TER) and a low resistance-area (RA) product remains challenging. To address this challenge, this work introduces non-
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Quantum resonant tunnelling enhances hydrogen bond rotation of confined water#612684
- Quantum resonant tunnelling enhances hydrogen bond rotation of confined water#611207
- Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance#640026
- $0-π$ transitions in non-Hermitian magnetic Josephson junctions#987647
- Review of: "transistor nMOS (with ultra-low power consumption, energy-efficient computing, during the subthreshold range)"#77316
Record · ID 1106110
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive