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Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications
Abstract Close-spaced vapor transport is a plausibly low-cost, high-rate method to grow III–V materials for photovoltaic and photoelectrochemical device applications. We report the first homoepitaxial growth of GaAs microstructures on (100)- and (111)B-oriented GaAs substrates using patterned SiOx a
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