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Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure
In this work, we demonstrate high-mobility top-gate (TG) atomic-layer-deposited (ALD) crystalline In2O3 transistors through simultaneous interface and crystallinity engineering. First, a HfO2/In2O3/HfO2 stack is employed, enabling epitaxial-like crystallization of the ultrathin In2O3 channel, becaus
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