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InGaAs and GaAsSb PIN Nanowire Arrays with Large Absorption around 1.55 μ m for Room Temperature Infrared Applications
We report a comparative analysis between InGaAs and GaAsSb-based top-down cylindrical nanowire arrays fabricated from p-i-n heterostructures. Optical constants measured via spectroscopic ellipsometry were incorporated into FDTD simulations to optimize array geometries. Simulations indicated that GaA
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