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Resistive Switching and Neuromorphic Computing in Metal/Nb:SrTiO$_3$: Mechanisms, Interface Physics, and Charge Transport
Resistive switching (RS) in Nb-doped SrTiO$_3$ (Nb:STO) based memristive devices has attracted sustained interest in information processing and novel computing because of its forming-free operation, large on/off ratio, and gradual conductance modulation. Metal/Nb:STO Schottky junctions have emerged
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