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Growth and Interface Engineering of Superconducting TiN on Sapphire by Thermal-Laser Epitaxy
Thermal-laser epitaxy (TLE) extends the accessible pressure, temperature, and growth-rate regimes of conventional molecular-beam epitaxy, enabling in situ laser annealing, high-purity buffer-layer growth, and efficient evaporation of refractory elements. These capabilities make TLE a promising platf
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