arXiv (All)
open access
Oxygen-vacancy quantum spin defects in silicon carbide
Optically addressable spin defects in wide-bandgap semiconductors are promising building blocks for quantum sensing and quantum networks. Establishing their atomic structure is essential for understanding functionality and enabling controlled engineering. In 4H-SiC, the PL5 and PL6 centers have long
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Disentangling octahedral distortion and symmetry breaking in the ordered double perovskite SrLaCoNbO$_6$#1142143
- Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells#139200
- Field-driven quantum phase transitions in a spin-1/2 Heisenberg antiferromagnet on an extended Lieb lattice#1013260
- Secondary‐Sphere Hydrogen Bonds Regulating Spin–Redox Interplay in Hemes#661966
- Dual quantum locking: Dynamic coupling of H(2) and H(2)O sublattices in hydrogen-filled ice.#442953
Record · ID 1116094
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive