In-Memory AM Demodulation Using an All-Silicon Independent-Dual-Gate Gain-Cell Memory with $<10^{-22}$ A Leakage Determined by Single-Electron Counting

Ultra-low-leakage memories are attracting increasing attention for in-memory sensing and computing. However, achieving sufficiently long retention in silicon memories for analog signal processing remains challenging because of leakage through the access transistor. In this work, we demonstrate an al