arXiv (All)
open access
Digital Etching of Single-Crystalline Silicon Fin Barriers Down to Sub-10 nm
This work presents a fabrication process to realize sub-10 nm-thick, high-aspect-ratio Si fins using high-resistivity float-zone single-crystal Si wafers. Following anisotropic wet etching, a digital etching process based on repeated rapid thermal annealing (RTA) oxidation and vapor-phase hydrofluor
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Coherent cavity coupling in O-band silicon photonic sensors for water environment detection.#388882
- 2010src0243 [(C8H20N)2(SiF6).2H2O]#941554
- ARCOS: Zero-shot Boundary Localization for Corneal Layer Segmentation Across Optical Coherence Tomography Devices#926564
- Decoding non-faradaic signal transduction in organic electrochemical transistor based biosensors.#659690
- Deep-UV lensless holographic microscopy on visible CMOS sensors for low-dose centimeter-scale biochemical imaging#398639
Record · ID 1117157
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive