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Nanometer-scale operando electric field mapping in oxide junctions by correlative STEM-EBIC and 4D-STEM

Xie, Yining et al.
arXiv (All) · Papers
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materials-science
Understanding local electric fields at oxide interfaces is essential for linking interfacial electrostatics to device functionality, yet conventional electrical measurements infer these fields only indirectly. Here, we combine operando scanning transmission electron microscope electron-beam-induced
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