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A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band
Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remain
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