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Effect of Pb doping on the crystallization process and thermoelectric properties of Ge2Sb2Te5 phase change material
Phase change materials based on Ge-Sb-Te alloys are widely explored for their potential in both memory devices and thermoelectric applications. In this study, films of Ge2Sb2Te5 (GST) doped with varying concentrations of Pb were prepared and systematically investigated to trace the effect of Pb dopi
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