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Realization of ZnSe-based Field-Effect Transistors operating at Cryogenic Temperatures as a Platform for Future Spin-Qubit Applications
The wide-bandgap compound semiconductor ZnSe is a promising host material for the realization of electron spin-qubits. Its non-degenerate conduction band and the potential for isotopic nuclear spin purification promise long spin coherence times. Key requirements for such devices include reliable ele
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