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Hot-Carrier Distribution Spectroscopy by Transconductance in Two-Dimensional Field-Effect Transistors
The transconductance $g_m = dI_D/dV_G$ of a field-effect transistor (FET) is conventionally read as a proxy for carrier density. We show that it is instead a spectroscopic probe of the carrier distribution: because $g_m$ weights the spectral current $j(E)$ by the gate-voltage derivative $\partial f(
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