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HVPE Homoepitaxy of $β$-Ga$_2$O$_3$: High-Temperature Growth and Orientation-Dependent Surface Evolution

Sarker, Sourav et al.
arXiv (All) · Papers
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applied-physicsmaterials-science
In this work, we systematically investigate homoepitaxial $β$-Ga$_2$O$_3$ growth by halide vapor phase epitaxy (HVPE) on (010), (001), and ($\bar{2}$01) native substrates over a broad growth parameter space, extending the growth temperature as high as 1150 $^\circ$C. The growth kinetics exhibit stro
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