arXiv (All)
open access
Landau-like formalism for the thermal-runaway and filamentation instabilities in switching Mott devices
Correlated oxides can switch to a low-resistance state when exposed to a voltage, making these insulator-to-metal transition materials promising candidates for memristor technology. Switching in materials such as VO2 occurs because of a thermal-runaway instability that leads to the abrupt formation
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Polyoxometalates (POMs) Memristors/Neuromorphic Devices: From Structure Engineering to Material and Function Integration.#9036
- From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO$_x$ Memristive Devices#1078118
- Optoelectronic-Driven van der Waals Ferroelectric Materials-Based Memory Devices for Retinomorphic and In-Sensory Hardware.#9062
- Epitaxial ferroelectric memristors integrated with silicon#156194
- Boosting the Memory Window of Memristive Stacks via Engineered Interfaces with High Ionic Mobility#974278
Record · ID 1155990
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive