Intrinsically stretchable all-polymer neuromorphic visual adaptive transistors based on multidimensional-phase-separation-induced micromesh.

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Learn more: PMC Disclaimer | PMC Copyright Notice Nat Commun . 2026 Feb 14;17:2806. doi: 10.1038/s41467-026-69534-6 Search in PMC Search in PubMed View in NLM Catalog Add to search Intrinsically stretchable all-polymer neuromorphic visual adaptive transistors based on multidimensional-phase-separation-induced micromesh Chengyu Wang Chengyu Wang 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China 3 Beijing Institute of Control Engineering, Beijing, China Find articles by Chengyu Wang 1, 2, 3 , Mingcong Qin Mingcong Qin 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Mingcong Qin 1, 2 , Jianzhe Sun Jianzhe Sun 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Jianzhe Sun 1, 2 , Yangshuang Bian Yangshuang Bian 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Yangshuang Bian 1, 2 , Mingliang Zhu Mingliang Zhu 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Mingliang Zhu 1, 2 , Wenkang Shi Wenkang Shi 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Wenkang Shi 1, 2 , Jiaxin Hong Jiaxin Hong 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Jiaxin Hong 1, 2 , Yanyan Cao Yanyan Cao 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Yanyan Cao 1, 2 , Yiran Liu Yiran Liu 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Yiran Liu 1, 2 , Zhiyuan Zhao Zhiyuan Zhao 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Zhiyuan Zhao 1, 2, ✉ , Yunqi Liu Yunqi Liu 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Yunqi Liu 1, 2 , Yunlong Guo Yunlong Guo 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China Find articles by Yunlong Guo 1, 2, ✉ Author information Article notes Copyright and License information 1 Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, China 2 School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, China 3 Beijing Institute of Control Engineering, Beijing, China ✉ Corresponding author. Received 2025 May 27; Accepted 2026 Feb 2; Collection date 2026. © The Author(s) 2026 Open Access This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by-nc-nd/4.0/ . PMC Copyright notice PMCID: PMC13022258  PMID: 41690917 Abstract Stretchable neuromorphic optoelectronics requiring real-time perception and dynamic adaptive processing create tempting opportunities for wearable intelligent vision equipment. Existing bionic vision devices often lack scale-modulus deformable photosensitive materials and exhibit redundant manufacturing for complex structures to integrate optical neurofunctions, highlighting a critical gap in achieving both ductility and multifunctionality. Herein, we propose a defect-tunable viscoelastic photosensitive bulk-heterojunction based on multidimensional-phase-separation-induced micromesh for all-organic intrinsically stretchable neuromorphic visual adaptive transistors. The resultant devices demonstrate maintained high photosensitivity and multimodal broad-wavelength photoadaptation even under 100% biaxial mechanical strain. Notably, a record-ultrafast adaptive time down to 0.4 s is achieved by the all-organic intrinsically stretchable visual adaptive transistors, allowing a high energy-saving ratio of 88.4%. Moreover, a low paired-pulse depression index down to 44.37% is also accomplished, exhibiting the ability of abnormal discharges reduction and normal neural network function restore. The superior bionic visual adaptive systems allowing detailed time-varying intelligent information conversion, can realize highly misleading encrypted wireless optical communications. Furthermore, contrast vision-adaptive pixels are successfully constructed to avoid element absence for advanced driving assistance systems simulation in extreme environments. This technology promises to advance skin-like neuromorphic vision systems for applications including visual cryptography, bioinspired robots and unmanned intelligence. Subject terms: Electronic devices, Sensors and biosensors Wearable neuromorphic optoelectronics require advanced dynamic perception and multifunctional integration. Here, authors develop intrinsically stretchable neuromorphic visual adaptive transistors with simpler structure and improved performance with adaptive time down to 0.4 s. Introduction Evolving neuromorphic optoelectronic systems herald a paradigm shift in bionic intelligent vision and autonomous environment-adaptive controls. By synergistically integrating cognition, adaptation and determination, the advanced systems aspire to emulate intricate visual neural networks, unlocking unparalleled potential for next-generation artificial intelligence equipment, such as advanced driver assistance systems (ADAS), medical auxiliary gadgets, augmented reality displays and bionic robots 1 – 5 . Neuromorphic visual adaptive electronics can substantially enlighten the efficiency and elegance of real-time visual feedback, thereby enabling rapid adaptation to the complex and dynamic contexts. Such devices require innovative photosensitive material design, delicate tunable defect construction, and multiple neuro-functional engineering 6 – 8 , while significant progresses have been made on two-dimensional materials with energy level modulation 9 – 11 , synergistic effects of multilayered heterojunctions 12 – 14 , and complex functional circuit integration 15 , 16 . Among them, the multi-layer heterojunction design effectively broadens the adaptive wavelength range and enhances speed by the acceptor-donor polymers and the defect state within intermediate layer; while diverse material design endows it with the potential for adaptive tunability. However, existing neuromorphic visual adaptive electronics have still been revealed some obvious limitations on advancing applications, due to typical mono-functionality, challenging preparation and severe performance degradation under mechanical strain resulting from intrinsic material stiffness 17 , 18 . As the human-computer interaction intelligence (HCI) proliferates across various fields, bionic wearable and implantable equipment that allows personalized feedback and adaptation, is driving innovation and urgency 19 , 20 . Therefore, intrinsically stretchable neuromorphic optoelectronics with convenient fabrication, high versatility and cross-scale modulus adaptability are of great satisfaction and attractiveness 21 . Notably, organic materials are becoming an inevitable componence as they can provide excellent biocompatibility, mechanical compliance and tunable optoelectronic properties for seamless attachment onto complex-shaped surfaces and designable bionic functionality 8 , 22 . However, all-organic intrinsically stretchable adaptive phototransistors have not yet been achieved, and major challenges remain in merging free deformation, tunable defect design, and high photosensitivity into a single device. To address these issues, organic bulk heterojunctions (BHJs) stand out as ideal candidates, allowing tunable optoelectronic properties, lot-cost solution processes and compatible large-scale manufacturing 23 , 24 . Consequently, enabling multi-component engagement and specific phase separation modulation to integrate efficient charge transport, broad wavelength absorption and scalable adaptive behaviors will crucially pave the way for advancing intrinsically stretchable neuromorphic optoelectronic devices 25 , 26 . Herein, we report an intrinsically stretchable neuromorphic visual adaptive transistor (ISNVaT) based on organic viscoelastic photosensitive bulk heterojunctions by employing donor-acceptor polymers and polar elastomers. Due to uneven surface energies and thermodynamics, Van der Waals force enabled unique multidimensional-phase-separation-induced micromesh (MPSM) evolutions. Such MPSM films not only ensured intrinsic stretchability and retentive photosensitivity but also provided tunable charge-trapping defects for visual adaptive neuromorphic behaviors. The resultant ISNVaT obtained high near-infrared light photosensitivity (I light /I dark å 10 4 ), high biaxial stretchability (up to 100%), multimodal broad-wavelength photoadaptation (from visible to near-infrared light) and considerable inhibitory synaptic behaviors. Notably, our device, developed as the all-organic intrinsically stretchable adaptive transistor, achieved a record-ultrafast adaptive time down to 0.4 s, allowing a high energy-saving ratio of 88.4%. Moreover, an extreme low paired-pulse depression index down to 44.37% was also accomplished, exhibiting the ability of abnormal discharges reduction and normal neural network function restore. Consequently, superior bionic visual adaptive systems resolved complicated environmental information into detailed time-varying intelligence, thus enabling highly misleading encrypted wireless optical communications and advanced driving assistance systems (ADAS) simulation in extreme environments. MPSM-based skin-like neuromorphic vision systems technology would push forward emerging applications including visual cryptography, bioinspired robots and unmanned intelligence. Results MPSM viscoelastic photosensitive semiconductor Vision enables individuals to interpret complex environmental information and form profound perceptual experiences by accurately capturing subtle changes in light and color 6 . (Fig. 1 a, b ) As an extremely delicate mechanism in biological visual systems, visual adaptation provides dynamical adjustment and real-time cognitive stability to optimize visual input to cope with a dynamic world, thus guaranteeing effective transformation of diverse visual information into a clear and consistent cognitive experience 27 , 28 . To model visual system, intrinsically stretchable neuromorphic optoelectronic devices based on organic photosensitive heterojunctions, which process high photosensitivity, excellent ductility, multifunctionality and biocompatibility, are potential candidates. Notably, polymer aggregation and crystallization behavior of heterojunctions play a crucial role in the performance 29 , 30 . However, gaining control over multicomponent polymer self-assembly and phase separation morphology to introduce tunable defect states and process high carrier transport capability with high photosensitivity performance remains challenging. Thus, we proposed an all-polymer bulk heterojunction composed of ideal doner DPP-DTT, acceptor N2200, and highly polarized elastomer polyurethane (PU) (Fig. 1c ). Fig. 1. All-polymer photosensitive bulk heterojunction with multidimensional-phase-separation-induced micromesh. Open in a new tab a Structural formula of doner-acceptor polymer and polar elastomer for heterojunctions. b Visual adaptation mechanism of human eyes and advanced driving assistance system simulation. c Schematic diagram of hybridization trends in strain-insensitive bulk heterojunction. d – g Morphology comparison between neat doner-acceptor polymer heterojunction films (upper) and hybrid heterojunction films with polar elastomers (lower). d Three-dimensional view of atomic force microscope (AFM) images. e Surface morphologies of AFM images. f Bottom morphologies of AFM images. g Cross-section morphologies of scanning electron microscope (SEM) images. Typically, the DPP-DTT/N2200 polymer doner-acceptor system is widely employed due to matchable energy levels and similar surface energies 31 (Supplementary Fig. 1 and Supplementary Table 1 ). While the surface energy of hybrid materials controls the morphological evolutions under phase separation, the DPP-DTT/N2200 blends crystallized into a closely intertwined fibrous network, exhibiting a smooth surface morphology and good crystallinity after solvent evaporation (Supplementary Fig. 2 ). Though the favorable mixture led to highly effective photosensitivity and charge transport, it was unable to construct neuromorphic functions and lacked stretchability. However, the high polar elastomer PU processed mismatch surface energy which resulted in great morphological evolutions (Fig. 1c and Supplementary Table 1 ). The composite polymer thin films with different weight percentages of PU were prepared, and their morphologies were examined by AFM (Fig. 1d and Supplementary Fig. 2 ). With the incorporation of PU, the composite polymer film demonstrated isolated micro-spherical domains which were dispersed in the polymer fiber networks, appearing as distinct holes with an approximate average diameter of 0.8 μm and a depth of 15 nm. (Fig. 1d ). As the PU weight percentage increased, the isolated micromesh grew and tended to bridge with one another, generating a new continuous phase. The dimensionality of the phase separation greatly affected the film physical properties, as well as the charge transport behavior. We further explored the actual existing micromesh forms by AFM and SEM of both surfaces and cross sections (Fig. 1 e- g ). While the neat film exhibited fibrous morphologies, the bottom of the ternary blend film equally demonstrated apparent micromesh with denser but smaller-diameter microspheres (Fig. 1 e, f ). The heavier mass and higher surface energy of the elastomer led to more aggregation at the bottom. Moreover, we could observe not only surface but also vertical multi-location distribution of elastomers in the ternary blend film cross-section while the DPP-DTT/N2200 blend film exhibited a flat fiber morphology. (Fig. 1g and Supplementary Fig. 3 ) Consequently, it turned out that the micromesh was multidimensionally dispersed in the entire three-dimensional space. We showed the hole statistics under specific range area, in which the coefficient of variation was obtained as 0.261 which could be regarded as moderate uniformity. Different from individual horizontal or vertical distribution which was susceptible to obvious cracks under mechanical deformation due to uneven stress dispersion, the multidimensional-phase-separation-induced micromesh (MPSM) would enable the ternary blending film adequate stress dissipation sites to maintain favorable elasticity and multi-level tunable defect states for optoelectronic neuromorphic applications 32 , 33 . Further, UV-vis absorption spectra were conducted to evaluate the effect of MPSM-based elastic photosensitive heterojunction on optical properties (Supplementary Fig. 4 ). Due to the strong complementary absorption between DPP-DTT and N2200, the neat photosensitive heterojunction showed a broad complementary absorption from visible to near-infrared light, and a strong peak at 808 nm and 400 nm that corresponds to the characteristic peaks of DPP-DTT and N2200, respectively. However, the MPSM films only showed a slight blue shift, verifying the non-destructive hybridization with the elastomer. In addition, the broad absorption guaranteed visual detection in a wide range of wavelengths. Developing a novel strategy for intrinsically stretchable organic photosensitive heterojunction preparation with generalizability and accessibility is essential for both research and industry. We first explored the differences between various elastomers and PU into DPP-DTT/N2200 blending systems to evaluate the uniqueness of MPSM. It was discovered that elastomers with low polarity (Supplementary Table 2 ), such like styrenic block copolymers (SBS), styrene-ethylene-butylene-styrene (SEBS), and poly(dimethylsiloxane) (PDMS), failed to produce isolated micromesh when hybridized. Instead, they squeezed the size of the polymer semiconductor fibers, producing conventional nanoconfined behaviors, and the exact difference lay only in the diameter and distribution of the fiber network (Supplementary Fig. 5 ). Besides, due to its excessive polarity and hydrophilicity, polyethylene glycol (PEG) with high polarity did not perform well when hybrid with semiconductors. It proved that the proper polarity, which differed greatly from that of polymer semiconductors, promoted the formation of micromesh morphologies. As recently extensively studied, nanoconfined morphology benefited carrier transport properties by confining polymer fiber networks 34 . However, the MPSM films showed similar surface roughness or even less, which would provide comparably great surface contact for carrier transport. We then constructed fundamental bottom-electrode silicon-based transistors to test the photoelectric capability among those films and demonstrated the morphology structure-film properties-optical function correlation under different elastomers hybridization. It turned out that the specific polarity provided appropriate morphology, while the optimized film surface and well-fused hybridization offered better photosensitivity. Therefore, MPSM films exhibited the highest photosensitivity while the SEBS-hybrid films showed the second (Fig. 2a and Supplementary Fig. 6 ). Fig. 2. Uniqueness and universality of MPSM films. Open in a new tab a Typical relationship between morphology, film properties and optical functions of different elastomers hybridization in descending order of polarity. b Photosensitivity and film properties under different donor-acceptor semiconductors. (The roughness represented RMS values) ( c ) Temperature effect on photosensitivity and hole ratio of MPSM films. d Effect of elastomer ratio on adhesion properties. e Scanning near-field optical microscopy (SNOM) characterization for donor-acceptor polymers distribution analysis at 1546 cm −1 . f SNOM characterization for elastomer distribution analysis at 1125 cm −1 . g Correlation between hole ratio and the density of defect states. h Potential changes between neat donor-acceptor heterojunctions and hybrid MPSM heterojunctions. i Grazing-incidence wide angle x-ray scattering (GIWAXs) images of neat donor-acceptor heterojunctions, and ( j ) hybrid MPSM heterojunctions. k Analysis of in-plane information, and ( l ) out of plane information under different elastomer ratio. Moreover, we replaced some common donor and acceptor organic semiconductors that hybrid with PU to evaluate the generalizability. Even with different organic donor-acceptor systems, including small molecules, those films exhibited similar micromesh morphology and low roughness, which proved the unique morphology was mainly dependent on the elastomer PU properties (Supplementary Fig. 7 ). Among various organic donor-acceptor hybrid systems, the DPP-DTT/N2200 system exhibited the best photosensitivity (Fig. 2b and Supplementary Fig. 8 ). Consequently, MPSM had been validated to have excellent optoelectronic properties and are universally applicable to existing most organic heterojunction systems, which would offer new opportunities in the future wearable optoelectronic devices. Subsequently, we identified the DPP-DTT/N2200/PU based ternary blend heterojunction as the core for subsequent optoelectronic neuromorphic transistors preparation. As solvent and annealing temperature/evaporation rate had considerable impact on film morphology and performance 35 – 37 , their effects were also explored. To fairly compare relevant variations, we first extracted the ratio of hole area on the film surface at a fixed area for morphological comparison. On the one hand, the solvent would cause changes in pre-aggregation forms, so that higher solvent polarity resulted in a smaller diameter, higher hole ratio and higher roughness of the micromesh films 38 – 40 (Supplementary Figs. 9 , 10 and Supplementary Table 3 ). On the other hand, the annealing temperature would modify polymer crystallization, while the solvent evaporation would force the elastomer movement via Marangoni effect 41 . It turned out that too high or too low a solvent temperature affected the polymer fibers size, while an optimal evaporation temperature would provide the highest photoresponsibility (Fig. 2c and Supplementary Fig. 11 ). As the elastomer PU offered intrinsic viscoelasticity, the MPSM films would be endowed with tight polymer intertwining and improved mechanical ductility. Peak-force quantitation nanomechanical mapping (PFQNM) were well characterized to perform those features (Supplementary Fig. 12 ). With increasing PU content, obvious upward trends of adhesion (from 1.13 to 8.57 nN) and slight increase work of adhesion (from 58.29 to 60.01 mJ m -2 ) were observed, which would allow compact contact in the stretchable device construction and better resistance to strains (Fig. 2d and Supplementary Table 4 ). It was worth mentioning that microstructural component variations were largely responsible for stress distribution optimization and crack concentration reduction 42 . As the PU microspheres functioned as multiple stress dispersion locations and internal binder, the MPSM heterojunctions exhibited excellent stretchability that could effectively delocalize the tension stress and prevent the crack propagation that no obvious cracks were observed even under 100% strain 26 (Supplementary Figs. 13 and 14 ). We then conducted the scanning near-field optical microscopy (SNOM) to detailly determine the spatial distribution of each component 43 , 44 . From the infrared curves recorded by Fourier transform infrared (FTIR) spectrometer, it was clearly observed that the MPSM films did not alter the structure of each polymer, to a certain extent, proving that the hybridization would not break the optoelectronic ability of photosensitive semiconductors (Supplementary Fig. 15 ). Among the differences in their peaks, the characteristic wavelengths of 1546 cm −1 and 1125 cm −1 could be selected to further analyze the polymer semiconductor and elastomer domains, respectively (Supplementary Fig. 16 ). As shown in Fig. 2 e, f , it could be deduced that the PU was mainly concentrated in the isolated hole area and formed a thin covering on the surrounding surface. In contrast, the DPP-DTT/N2200 were mostly distributed in the continuous areas, while also existed a minority in hole areas. Additionally, similar conclusions could be reached according to the distinguished modulus region in PFQNM (Supplementary Fig. 12 ). Furthermore, we applied the characteristic wavelengths of 1023 cm −1 and 964 cm −1 in SNOM measurement to make a distinction between DPP-DTT and N2200, respectively (Supplementary Fig. 17 ). Due to similar chemical structure, molecular weight and surface energy, two semiconductors were tightly intertwined as fiber networks which guaranteed the high-efficiency exciton separation and charge transport for sensitive broad photodetection. To confirm this perspective, we immersed the MPSM films into N,N-Dimethylformamide to selectively wash off PU, since PU could be dissolved while DPP-DTT/N2200 could not. As shown in AFM image, the continuous mesh-like phase was maintained, whereas most of the isolated domains were washed off and the polymers exhibited a network of tightly intertwined fibers (Supplementary Fig. 18 ). As a result, the PU not only provided optimized MPSM films for excellent strain tolerance but also promoted close interconnections between polymer semiconductors for high conversion efficiency. Moreover, the tunable discontinuous hole areas broke up the uniformity of heterojunction films, which allowed for the defect state introduction. To confirm the potential correlation between defect states and morphology evolution, and provide a detailed assessable quantification, the capacitance measurement and the hole-only devices measurement were applied by constructing specific devices 45 , 46 (Supplementary Figs. 19 and 20 ). As the elastomer content increased, the hole ratio was significantly raised to 38.12%, accompanied by a certain introduction of the defect state from flat films (6.03 × 10 16 cm −3 ) to micromesh films (12.66 × 10 16 cm −3 ) (Fig. 2g and Supplementary Table 5 ). To further explore the reconfiguration of charge carriers in relation with the photo-modulating behavior, in situ Kelvin Probe Force Microscopy (KPFM) was utilized to measure the surface potential of the neat and MPSM films before and after the illumination 47 , 48 (Fig. 2h and Supplementary Fig. 21 ). In the dark state, a low surface potential was demonstrated for the neat film (4.53 mV for average). However, due to the phase separation induced by the elastomers, the charge distribution was not homogeneous, causing a large potential difference on the surface of the film, which leads to a much higher average surface potential for the hybrid film (36.4 mV for average). Generally, the accumulation of holes or the release of electrons led to the rise of the surface potential 49 , 50 . After illumination at fixed irradiance, the neat film demonstrated a slight increase in surface potential due to the excellent photovoltaic conversion of the polymer, which resulted in the enrichment of surface photogenerated holes (5.15 mV for average). In contrast, significant intrinsic defects were introduced into the hybrid film by phase separation, which significantly enhanced the capture ability of photogenerated carriers. Thereby, the photogenerated holes would be largely trapped, leading to an interfacial hole-deficient state on the surface and further resulting in an obvious potential drop diametrically (17.3 mV for average). Therefore, the defect-tunability was certified to a strong positive correlation with the hole ratio, providing non-volatile photoconductive behavior for neuromorphic computing. Having quantitatively identified defect state development, we continued to characterize the relevant aggregation and crystallization variation between the neat and MPSM heterojunctions for qualification 51 . 2D grazing incidence wide angle X-ray scattering (GIWAXS) patterns and their corresponding intensity profiles along the out-of-plane and in-plane directions were applied in Fig. 2 i-l. Obviously, the neat films displayed sharper and better-defined diffraction peaks compared to MPSM films, which suggested a greater structural disorder in the lateral (Fig. 2 i, j ). More elaborately, the GIWAXS 1D line cuts corresponding to the in-plane (q xy ) and out-of-plane (q z ) scattering intensities indicated that the polymer presented much less crystallinity and orientation as the elastomer content increased, both in the view of in-plane and out-of-plane (Fig. 2 k, l ). As a result, the MPSM allowed rich intrinsic defect states in the heterojunction, and such intrinsic defects could be significantly modulated by the elastomer content as well as the micromesh morphology. All-organic intrinsically stretchable neuromorphic vision adaptive transistors Integrating multiple features such as excellent stretchability, photoresponse ability and defect state tunability, our viscoelastic MPSM photosensitive heterojunction was regarded as a cornerstone for intrinsically stretchable neuromorphic vision devices. We applied such heterojunctions into intrinsically stretchable phototransistors with a bottom-gate-top-contact configuration to simultaneously emulate visual and neuromorphic functions (Fig. 3a ). Notably, the all-in-one MPSM heterojunction effectively simplified device structure and enabled convenient construction (Supplementary Fig. 22 ). Through sequential thermal lamination and transfer procedures, the MPSM heterojunction owned an ideal contact interface with dielectric layer due to stable work of adhesion, which ensured the multiple optical neurobehaviors of ISNVaTs (Supplementary Figs. 23 and 24 ). We preliminarily investigated the optoelectronic properties of MPSM with different PU contents and surface morphology (Supplementary Fig. 25 ). It was observed that the high-content PU, as well as large hole ratio, effectively reduced off-state current and enhanced photocurrent/dark current ratio ( I light / I dark ), which was attributed to inhibited carrier recombination through the elastomer. Consequently, the MPSM films of 70% PU content were selected for subsequent preparation, as it exhibited comparable I light / I dark level with that of 50% content but more superior stretchability. We demonstrated typical transfer curves with hysteresis of the ISNVaTs under different conditions (Fig. 3b ), and the optimum performance including a remarkable light intensity-dependent modulation, a high photocurrent/dark current ratio ( I light / I dark ) up to 10 4 and excellent operational stability were observed in the ISNVaTs based on MPSM films for NIR illumination (Fig. 3c and Supplementary Fig. 23 ). Along with the high photoresponse to NIR, the prepared ISNVaTs also showed obvious photoswitching behaviors under visible light, which was mainly ascribed to the wide absorption of MPSM heterojunction (Fig. 3d and Supplementary Fig. 4 ). Due to the introduced defect states, our devices demonstrated unique photocurrent decay behaviors, and typically produced diverse behavioral patterns with light intensity variations, which were associated with the visual adaptation (Fig. 3e ). Notably, this phototriggered dynamic adaptation was largely modulated by morphology evolution, while the MPSM with higher PU content displayed better visual adaptation. The aforementioned tunable states were mainly responsible for the strong negative correlation between adaptive time and hole ratio (Fig. 3f ). As visual adaptation relied primarily on the switching of rod and cone cells, and this intercellular transmission of photosensitive information depended on the binding of calcium ions to protein channels. Based on the adaptation mechanism in photoreceptors 52 , when the photocurrent decays to 30-50%, the intracellular Ca²⁺ concentration would fall to a critical threshold, at which point the rate of acclimatization would slow down. Therefore, we defined the time of 40% decay of maximum photocurrent to evaluate adaptive ability, and faster adaptive time would provide more potential for the future visual bionic applications. (Supplementary Fig. 24 ) We further extracted the average diameter of holes at different elastomer ratios and plotted it with the adaptation time in Supplementary Fig. 25 . It was demonstrated that, as the elastomer ratio increased from 30%, 50% to 70%, the average diameter changed from 0.18 um, 0.57 um to 0.80 um, and the adaptive time showed a negative correlation decreasing from 30.4 s, 1.6 s to 0.4 s which proved the holes in the micromesh promoted neuromorphic visual functions. Moreover, we measured the temporal photoresponse curves of ISNVaTs, in which the defect-tunable MPSM film showed a rapid photo current decay and even an energy-saving ratio of 88.4% over a typical non-adaptive phototransistor. That was, the energy-saving ratio indicated the energy saving of the photoadaptive device under the same voltage, time and illumination conditions compared with the general photodetector with the same photosensitivity, which could be calculated by ( E p h o t o d e t e c t − E a d a p t a t i o n ) / E p h o t o d e t e c t . (Fig. 3g ) Lower energy consumption further supported advantages of the MPSM-based devices in neuromorphic applications. Notably, we comprehensively reviewed the latest research on adaptive devices to compare the corresponding adaptive performance, and it turned out our ISNVaT exhibited record-fast adaptive speed of 0.4 s among current reports 9 – 13 , 16 , 53 – 62 , while it was also a novel all-organic intrinsically stretchable vision adaptive transistor (Fig. 3h , Supplementary Fig. 26 and Supplementary Table 6 ). Based on donor-acceptor bulk-heterojunction, our devices integrated excellent photosensitivity and defect states in one. Compared with other reports that using multilayer heterojunction combination 12 or layer heterojunction 13 , it simplified the device structure and would be potential to improve the adaptive time 15 . To demonstrate composite bionic visual adaptation, we then carefully engaged the multiple adaptive behaviors for our device. As the light intensity increased, the peak photocurrent was substantially increased, and while it would prominently decrease within the following few seconds, the amplitude and duration of the current decay were also affected. To characterize the adaptive performance of ISNVaTs, the time dependent photosensitivity (P t ) was defined as follows 12 P t = I t I d a r k 1 where I t represented the current after t-second illumination, and I dark represented the dark current, respectively. Fig. 3. optoelectronic recognition and adaptation behaviors of ISNVaTs. Open in a new tab a Schematic of all-organic intrinsically stretchable neuromorphic visual adaptive transistors (ISNVaTs) based on MPSM films. b Typical transfer curves with hysteresis of the 70%-PU-based ISNVaTs under dark state and 808 nm illumination ( P in = 1050 μW cm −2 ). c Typical transfer curves of the ISNVaTs under 808 nm illumination with various intensities. d Typical transfer curves of the ISNVaTs under various wavelength ( P in = 1050 μW cm −2 ). e Light-intensity dependent adaptive behaviors of ISNVaTs. f Correlation between adaptive time, elastomer ratio and hole ratio. g Energy consumption savings from adaptive behaviors. h Comparison of the adaptive time achieved by previously reported adaptive devices with our work, classified by organic and inorganic active layers. i Extracted adaptive rate index for light intensity dependence ( V DS = -10 V, V G = 0, 808 nm), ( j ) gate voltage dependence ( V DS = -10 V, 808 nm, P in = 1050 μW cm -2 ), and k wavelength dependence ( V DS = −10 V, V G = 0, P in = 1050 μW cm −2 ). P t enabled to visualize the photoresponsivity, as well as the extent of photocurrent changes by the difference between the corresponding illumination duration. As shown in Supplementary Fig 27 , the devices displayed a huge difference in P t under various illuminations, while the P 0.1 and P 10 were dropped from 33.14 to 22.22 under 5.87 μW cm −2 , and from 946.22 to 357.61 under 1050.14 μW cm −2 . It was proved that light intensity was positively correlated with photoresponsivity and temporal current decay. The normalized I - T curves intuitively revealed the critical effects of P in , in photodetection, where the current exhibited obvious tunable decay. We further extracted adaptive rate (AR) and adaptive amplitude (AA) from the data to analyze adaptive behaviors from multiple perspectives, and they were defined as follows: A R t = d I t d t 2 A A t = I max − I t I max 3 where I max represented the peak photocurrent, and t represented the moment of illumination, respectively. To benchmark adaptive performance, higher AR and AA generally were denoted as greater adaptive abilities with stronger photocurrent inhibition. The AR 0.1 was evaluated from 1.02 to 116.75 nA s -1 which achieved a more than 110 times increase, which is consistent with the AA 0.1 ranging from 24.7% to 88.2% depending on the light intensity (Fig. 3i and Supplementary Fig. 27 ). After multiple repeated measurement cycle, the adaptive capacity of our devices remained well preserved and showed acceptable decrease in the maximum photocurrent (Supplementary Fig. 28 ). These results indicated that our device processed excellent phototriggered adaptive photoelectric behaviors, enabling the potential to emulate negative feedback functions in the visual system. Moreover, the gate modulation effect and broad wavelength absorption of our device would also lead to multi-conditional tunable adaptive behaviors. Then we further evaluated the photo-adaptive characteristics under applying various V G at a fixed illumination condition of 1050.14 μW cm -2 . Though the inhibition behaviors in P t both were observed when applying positive and negative V G , the adaptive behaviors did not perform the same way as the opposite gate voltage caused diverse effect on carrier transport (Fig. 3j and Supplementary Fig. 29 ). Owing to the characterization based on donor-acceptor heterojunctions, the engaged gate voltage caused higher the dark current but lower photo responsibility, which exhibited lower P t and AA compared to that at 0 V no matter positive or negative. However, the AR index demonstrated an obviously increasing trend from negative to positive voltage, which was attributed to the massive trapping of induced electrons by defect states. It was worth mentioning that all the photoadaptation could be achieved in the detectable wavelengths, from the NIR to visible light region (Fig. 3k and Supplementary Fig. 30 ). As UV-vis patterns confirmed, our device demonstrated an obvious photosensitivity drift from 808 nm, composite white light, 425 nm, 520 nm, to 625 nm, respectively. The differential light utilization resulted in distinct adaptive behaviors. Specifically, the superior photopic adaptation was achieved under 808 nm with the highest adaptive rate and amplitude value up to 130 nA s −1 and 0.4, whereas a limited adaptation under 625 nm with the lowest value of 40 nA s −1 and 0.2, respectively. Consequently, the ISNVaTs could simulate photopic adaptation of visual adaptation processes by time-varying inhibitive photocurrent, in which the light intensity, gate voltage and wavelength were critical to modulate the adaptive behaviors and processed reliable statistical validation. Skin-like vision systems endeavor to be seamlessly wearable and sufficiently cope with various buckling movements while ensuring remarkable neuromorphic optoelectronic tunability 8 , 63 . Therefore, high mechanical durability is of great significance to avoid any wearable limitations and performance degradation (Fig. 4a ). Since our devices were made in fully stretchable organic materials, they behaved relatively stable photoelectric properties under mechanical strains, proving potential usage in wearable and implanted electronics. In detail, all tests were based on specially designed stretching equipment, so that after fixing the device to the equipment, we could adjust to the corresponding tension degree and complete the strain-tolerance test statically. The on-current ( I on ) and photocurrent/dark current ratio ( I light / I dark ) did not occur significant degradation when the devices were subjected to stretching strains up to 100% in the directions parallel or perpendicular to the carrier transport (Fig. 4b , Supplementary Fig. 31 ). Moreover, the photoswitching behaviors of the devices could be maintained even after 1000 cycles of stretching-releasing test up to 25% biaxal strain (Fig. 4c , Supplementary Fig. 32 ). These excellent mechanical properties were achieved by allowing strain dissipation in the elastomer-rich hole area, while the polymer semiconductor fiber ensured photoelectric transport. To evidence the potential application in future wearable adaptive equipment of our devices, we further measured adaptive performance under stretching strain. Figure 4d and Supplementary Fig. 33 demonstrated the stability and tunability of adaptive behavior even under 100% strain and release state. Since mechanical strain altered effective photoactive area, a decreasing highest photocurrent value and slower adaptation with increasing stretching strain regularly and slightly. However, it could approximately return to the initial adaptive level. Besides, the gate voltage remained a critical role in effectively modulating adaptive behaviors when the devices were subjected to strain (Supplementary Fig. 34 and 35 ). For the adaptive rate, it was relatively constant under incremental strains and only exhibited less significant differences due to the gate voltage. Comparatively, for the adaptive amplitude, it showed an obvious decreasing trend with increasing strain at positive gate voltage, while it displayed less influence at negative gate voltage and even strain-enhanced at zero. As a result, elastic holes not only provided significant stress release sites, but also introduced tunable defect states, which ensured excellent strain tolerance and visual adaptation. Benefiting from this morphology, we could accomplish various optoelectronic neuromorphic functions such as synaptic simulation by altering light input forms. Fig. 4. Strain insensitivity and inhibitory synaptic properties. Open in a new tab a Photograph of an array of ISNVaTs under the mechanical strain. b Strain-tolerance characteristics of ISNVaTs (D = I Light /I Dark ). c Tensile stability of ISNVaTs with different stretching cycles ( V G = 0 V V DS = −30 V, 808 nm, P in = 1050 μW cm −2 ,). d Photoadaptive behaviors under different strains and gate voltages ( V DS = −10 V, 808 nm, P in = 1050 μW cm -2 ). e Inhibitory synaptic behaviors under multiple light pulses (10 times, t = 0.5 s, Δt = 0.5 s). f PPD index at different light pulse intervals and gate voltage with the same light pulse pair (1050 μW cm −2 , 0.2 s). g PPD index at different light intensities and gate voltage with the illumination time and Δt of 0.2 s. h PPF index under different wavelength under the same pair illumination condition (1050 μW cm −2 , 0.2 s) and the Δt of 0.2 s. i Schematic illustrations of charge transport and trapping mechanism in MPSM heterojunction films. Synapses enable delicate communication and coordination in visual system, which directly contributes to cognitive function and emotion regulation by supporting brain memory, learning and other complex behavior 64 , 65 . Correspondingly, our device could perform the basic synaptic characteristics and typical excitatory postsynaptic current (EPSC) response by applying various optical pulses. According to the retention time, the synaptic plasticity can be classified into short-term plasticity (STP) and long-term plasticity (LTP), in which STP can rapidly adjust synaptic transmission efficiency to aid in immediate adaptation and signal processing 17 , 18 . As a figure of merit for quantifying the STP, paired-pulse depression (PPD) describes the inhibition effect of EPSC by two successively applied light interspikes, which permits better environmental adaptation and emotion regulation 66 (Fig. 4e ). In this work, the developed ISNVaTs with time-dependent response and memory characteristics could easily merge the phoroadaptation and paired-pulse depression (PPD) photosynaptic behaviors even without the involvement of unique architecture design. The PPD index can be defined as followed 67 , 68 : PPD = A 2 A 1 × 100 % 4 where A 1 and A 2 are the peak amplitudes of the EPSC induced by the first and second optical simulations, respectively. As shown in Fig. 4f , the calculated PPD index all increased gradually when increasing the interspike intervals ( Δt ), regardless of the gate voltage. We attributed this to the fact that short intervals would reduce the contribution of the latter pulsed photogenerated carriers, interacting with undissipated photocarriers of the former pulse in the MPSM films, while the dissipated carriers progressively restored to initial state after prolonged intervals. Notably, as the gate voltage allowed tunable carrier distributions, the devices manifested tunable PPD index that positive gate voltage weakened short-term inhibitory synaptic characteristics and an optimal PPD index up to 44.37% was achieved by applying negative gate voltage (1050.14 μW cm −2 , 0.2 s) (Fig. 4f and Supplementary Fig. 36 ). Notably, to date, it was one of the lowest PPD index among recent depressive synaptic transistors 66 – 78 . (Supplementary Fig. 37 and Supplementary Table 7 ) Furthermore, the PPD index was also strongly dependent on the light intensities and showed a similar negative correlation with the gate voltage (Fig. 4g and Supplementary Fig. 39 ). At low light intensities, few photogenerated carriers were produced and sufficiently conveyed by the electric field, proving a lower effect on the second pulsed photocurrent; whereas at high light intensities, the excessive photogenerated carriers demonstrated more obvious influence. At shorter optical pulse intervals, the filled defect states could not recover in time, thereby reducing the generation rate of phototriggered carriers in the heterojunction and thus forming inhibitory synaptic behaviors. Besides, the gate voltage-dominated carrier transport capacity and differentiated utilization of wavelength in the device also had a marked effect on synaptic behavior (Fig. 4h and Supplementary Fig. 40 ). Although gate voltage and source-drian voltage could affect the characteristics of optical synapses, our devices based on MPSM did not demonstrate good performance as synapses under electrical pulses. It has been verified that the relaxation of trapped charges and tunable interface defects were responsible for the synaptic 17 , 18 and vision-adaptive characteristics 9 , 12 , respectively. In our devices, the MPSM films integrated photosensitization, carrier transport, and defect modulation in one (Fig. 4i ). To further elucidate the mechanism of adaptive behaviors in ISNVaTs, it briefly described the possible charge transport and defect state tunability during the adaptation processes. While the acceptor-donner photosensitive semiconductor fiber tightly intertwined with each other, the photogenerated excitons were liberally generated, and the rapidly separated photogenerated carriers allowed directly transport under illumination, leading to the fast-reached peak photocurrent. Under constant illumination, the photogenerated holes were gradually trapped in defect states, thus causing a rapid decrease in photocurrent. Due to the defect states being eventually filled and dissipation of carriers, the photocurrent ultimately would drop to a fixed value with a dynamic balance between carrier capture and release. In detail, various light intensity and wavelength ensured direct effects on adaptive rate and amplitude through the quantities and separate efficiency photogenerated carriers. Since there was a limit level to carriers that could be transported by the electric field, high light intensity and strong absorption wavelength could generate excess carriers that resulted in more defect trapping processes. Different from the traditional donor-acceptor heterojunction-based photodetectors with a constant saturated photocurrent, our devices achieved the relative position shift between the intrinsic states and the quasi-Fermi level ( E F ) by designing defect-tunable elastic heterojunctions under various illumination conditions, thus achieving dynamic balance and self-modulation of photocurrent. Therefore, gate voltage could also be a crucial modification of adaptive behavior. When subjected to positive (negative) V G , more electrons (holes) in the conductive channel were produced, thus promoting (weakening) recombination with photogenerated carriers and leading to tunable adaptive behaviors. As a result, the ISNVaTs enabled by coupling adaptive modulations of light intensity, wavelength and gate voltage and achieved excellent adaptive performance with tunable current inhibition to light irradiation. Diverse tunable neuromorphic optoelectronic functionality and attachable strain-tolerance provided sufficient access and promise for intelligent wearable and implantable equipment 76 . Moreover, this adaptive neuromorphic optoelectronic function in complex light environment processes great potential to be applied in aerospace star tracker and other related products 79 – 82 . Vision-adaptive pixel with an ISNVaT array In contrast to conventional non-adaptive phototransistors with stable and consistent photocurrent, our adaptive transistors engaged both gradient photosensitivity and enriched information on time scales 83 , 84 (Fig. 5a ). Multidimensional information could be artificially extracted and processed as an optical wireless encrypted method for human-machine interaction 85 – 87 . More importantly, benefiting from specific merits of near-infrared light such as covertness, low electromagnetic interference, high-speed data delivery and security, our broad-absorption adaptive devices could elaborate on high-quality modern military communications 44 . We picked representative indexes of adaptive behaviors and encoded them with specific rules to represent the International Morse code, in which English alphabet and confidential messages could be addressed (Fig. 5b and Supplementary Fig. 41 ). In details, we set I ph-max and τ t as key condition and accessed to a private codebook within a defined factor, in which the threshold τ t was determined based on the adaptive characteristics of our devices. As the adaptive speed of adaptive devices under strong illumination showed a trend from rapid adaptation to slow and stable, we extracted the tangent slopes at different time points under different adaptive curves to evaluate the general trend change. It appeared that when τ t = I t /I ph-max around 0.26, the absolute value of tangent slope was close to 1, which could be regarded as the boundary area of trend change. Therefore, we regarded 0.26 as an important basis to distinguish the output that τ t å 0.26 implied an output of “1” for example. However, under other specific encryption requirements, the threshold value could also be customized according to the user or the event itself to achieve a unique encryption effect. We provided a visual schematic that would enhance the intuitiveness of the optical encryption concept (Supplementary Fig. 42 ). Therefore, by encoding specific programmed light stimulation with different wavelength and light intensity, the true as-input messages “PART” and “BOMB” were efficiently conveyed (conditioned t = 0.5 s), respectively (Supplementary Figs. 43 and 44 ). However, in facing the risk of intelligence leakage, our adaptive signals could be erroneously interpreted and get false instructions to confuse misfits, as a minor conditional offset would result in completely opposite output signals. As shown in Fig. 5 c, d , when conditioning time was informed from “t = 0.5 s” to “t = 1.5 s”, the false messages “FAKE” and “JUMP” were obtained. Consequently, the multimode information interpretation of adaptive behavior ensured highly secure and reliability communications, and demonstrated potential for human-machine interaction visualization. Fig. 5. Advanced visual adaptive system for optical communication cryptography and ADAS simulation. Open in a new tab a Abundance multidimensional information of visual adaptive behaviors, compared to non-adaptive photodetectors. b Specific codebook and rules for adaptive behaviors. c Misleading optical encrypted communication behavior under different wavelengths, as the true codeword ‘P.A.R.T’ was misdirected into ‘F.A.K.E’ ( d ) Misleading optical encrypted communication behavior under different NIR light intensities, as the true codeword ‘B.O.M.B’ was misdirected into ‘J.U.M.P’ . e Schematic of vision-adaptive pixel circuit and environmental reference circuit, where vision-adaptive pixel circuit converted near-infrared input signals to visible output signals. f Comparison schematic of ADAS simulation between vision adaptive transistors and conventional phototransistors. Vision adaptive systems avoided omission of environmental information during emergencies, in contrast to conventional systems. g ADAS simulation of vision-adaptive system under extreme weather conditions (such as foggy). h ADAS simulation of vision-adaptive system under deformation in special crashes (such as car accident). Due to the remarkable adaptability of the ISNVaTs, we first effectively emulated the vision-adaptive functions of the human eye. To demonstrate spatially resolved images, a composite uniform 5 × 5 transistor array with the small device-to-device variation was constructed to mimic visual adaptation behaviors. For an intuitive description of how human eyes adaptively receive information in extreme optical environments, we designed a special component distribution that the 13 adaptive devices were in an ‘A’ pattern, while the non-adaptive photodetectors were positioned in the other area as a reference, where extreme light could be directly applied to the array. Converging pixel current to the same level, the normalized images could be obtained under different illumination periods. By virtue of time-varying characteristics in the ISNVaTs, high-contrast A-shaped images were provoked in the instantaneous exposure that the non-adaptive photodetectors continuously maintained high photocurrent while our devices gradually adapt to the outside world. (Supplementary Fig. 45 ). These results implied that our ISNVaT array exhibited remarkable visual adaptation with a faster response comparison (<10 s) than the human eyes (3–30 min), and would hopefully be more advantageous for further dynamic adaptive imaging and elastic visual prosthetics over common phototransistors 88 . Therefore, deriving benefit from this obvious contrast, we explored the specificities further for more future intelligent applications. The adaptive current inhibition phenomenon was revealed using an ISNVaT pixel that attached to the ocular prosthesis and intelligent driving as a light-emitting diode (LED) driver, where the LED visualized the expected photopic behaviors from bright to dark (Fig. 5e and Supplementary Fig. 46 ). As the driver pixel demonstrated excellent ability to convert NIR light inspection to visible commands and avoid surrounding information loss, it was of significance for simulating Advanced Driver Assistance System (ADAS) in cars since intelligent driving required monitoring the distance to oncoming traffic and maintaining a stable environmental perception in complex weather conditions such as solarization, cloudy and foggy 89 , 90 . Thus, we applied a reference LED with low brightness to emulate stable and low-intensity signal feedback from the environment, while the drive pixel represented adaptive modulation in response to sudden emergencies. Typically, a non-adaptive pixel was also addressed for comparison. As shown in Fig. 5f , as soon as it sensed an external danger, the adaptive pixel immediately issued a strong alarm (LED was illuminated brightly), and then adapted to the desired level in a very short time, exposing external information to analyze the current situation. Instead, non-adaptive pixel continually maintained an alert to the emergency, and therefore obscured outside information, making it impossible to have a rational reaction, as the blurry reference LED was unnoticeable next to such a dazzling driven LED (Supplementary Fig. 47 and Supplementary Movie. 1 ). In particular, the adaptive pixel could also respond in special environments such as smoggy days, or unconventional circumstances such as crash-resulted deformation, for stable and reliable recognition 91 – 93 (Fig. 5g , Supplementary Figs. 48 - 49 and Supplementary Movie. 2 and Movie. 3 ). Traditional ADAS used submodular processing and relied on rule-based algorithms to identify targets and generate control commands. However, algorithmic identification would consume significant resources to calibrate the information perceived by the sensors. As a comparison, our adaptive system integrated perception, computation, and decision-making through visual neurofunctional bionics, which directly recognized events and made decisions on alarms from the device level. This not only contributed to resource consumption reduction but also improved the response speed time in case of an emergency. The adaptive system transforms ADAS into a potential of growing AI co-driver, resolving long-tail challenges of traditional approaches while reducing hardware iteration costs and development cycles 94 . Consequently, our devices were capable of high-speed encrypted communication and real-time decision making, advancing their positions as pivotal components in the evolution of intelligent, secure, and interconnected infrastructures. While secure digital interactions and seamless artificial intelligence integration escalates were in high demand, such devices held transformative potential for advanced wearable intelligent neuromorphic optoelectronics. Discussion Through surface energy and thermodynamic induced bulk-heterojunction engineering, unique multidimensional-phase-separation-induced micromesh films with intrinsic stretchability, retentive photosensitivity and defect tunability are successfully employed for neuromorphic optoelectronics. Benefiting from the superior adjustable properties of MPSM films, we achieved a universal all-organic neuromorphic visual adaptive system based on intrinsically stretchable phototransistors. The resultant devices exhibit maintained high broad-wavelength photosensitivity, multimodal photoadaptation and considerable depressive synaptic behaviors even under 100% biaxial mechanical strain. Notably, a record-ultrafast adaptive time down to 0.4 s is achieved by the all-organic intrinsically stretchable visual adaptive transistors, allowing a high energy-saving ratio of 88.4%. Also, low PPD index down to 44.37% is accomplished, which may help reduce abnormal discharges and restore normal neural network function. Furthermore, highly misleading encrypted wireless optical communications and advanced driving assistance systems simulation in extreme environments are implemented, proving excellent intelligent time-varying information processing capabilities. Therefore, our bionic visual adaptive system provides a universal strategy for visual cryptography, bioinspired robots and unmanned intelligence. Methods Materials and chemicals All the processing solvents, such as chlorobenzene, toluene, cyclohexane, 2-propanol, were easily purchased from commercial sources and used as received. The polymer poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione)thieno[3,2-b]thiophene) (DPP-DTT), poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene))-alt-(5,5-(1′,3′-di-2-thienyl-5′,7′-bis(2-ethylhexyl)benzo[1′,2′-c:4′,5′-c′]dithiophene-4,8- dione)] (PM6)>, PYT, PSV, poly{[N,N′-bis (2-octyldodecyl)- naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,29-bisthiophene)} (N2200), small molecular acceptor 2,2′-((2Z,2′Z)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro- 1 , 2 , 5 thiadiazolo[3,4-e]thieno[2,′′3″:4′,5′]thieno[2′,3′:4, 5]pyrrolo[3,2-g]thieno[2′,3′:4,5]thieno[3,2-b]indole-2,10-diyl)bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile (Y6) were supplied by Derthon Optoelectronic Materials Science Technology Co. LTD. (Shenzhen, China). The polymer elastomer PU was provided by Innochem. Carbon quantum dots (CQDs) (10 mg mL -1 , toluene) with an average diameter of 4 nm, were supplied by Nanjing MKNANO Tech. Co., Ltd. ( www.mukenano.com ), which were covered with plenty of carboxylic groups and hydroxyl groups. SEBS (H1221 and H1052) was provided by Asahi Kasei company. SEBS H1052 with 80% volume fraction of poly(ethylene-co-butylene) was incorporated with CQDs as the dielectric layer in the stretchable devices. SEBS H1221 with 88% volume fraction of poly(ethylene-co-butylene) was employed as the stretchable substrate and encapsulation layer in the stretchable devices, and as the elastic component in the hybrid polymer semiconductor and photosensitive layer. Poly(dimethylsiloxane) (PDMS, Sylgard 184, base and crosslinker) was purchased from Dow Corning. Carbon nanotubes (P3-SWNTs) for gate, source and drain electrodes were purchased from Carbon Solutions. Preparation of constituent thin films To optimize the transfer characteristics of various constituent layers, Si wafer was cleaned with the piranha solution (70 vol% H 2 SO 4 + 30 vol% H 2 O 2 ), deionized water, alcohol and acetone, and then modified by octadecyltrimethoxysilane (OTS) molecules to increase surface hydrophobicity. The CNT solutions (0.6 mg mL −1 ) were spray-coated onto the OTS-modified Si wafer with designed mask for the gate and source/drain electrodes ( L / W = 200/4000 μm). For organic bulk heterojunction films, a series of DPP-DTT:N2200:PU solutions (5:5:0, 3.5:3.5:3, 2.5:2.5:5, 1.5:1.5:7 by weight ratio) were prepared in chlorobenzene with a fixed total concentration of 10 mg/mL, which were further spin-coated onto the substrate at 4000 rpm, and then annealed at 150 °C for 20 min. Notably, the donor-acceptor polymers, elastomers, and solvents could be accordingly replaced in generalizability and modulation studies. For the dielectric layer, the SEBS-H1052 and carbon quantum dots (CQDs) were simultaneously dissolved in the toluene solvent at a specific weight ratio of 100:3.5. The dielectric film with a thickness of 2 μm was obtained by spin-coating the CQD/SEBS solution on the substrate at 1500 rpm, and then annealed at 90 °C for 40 min. Both semiconductor and dielectric layers were prefabricated on OTS-modified Si wafers for the subsequent use. The SEBS-H1221 solution with 200 mg mL -1 was dropped onto OTS-modified glass as a substrate. Fabrication of ISNVaTs The ISNVaTs with a bottom-gate-top-contact (BGTC) configuration were fabricated through consecutive thermal lamination-transfer procedures. The elastomer substrate was employed to successively transfer the patterned gate electrodes, dielectric layer, nanoconfined semiconductor film, patterned source/drain electrodes from OTS-treated Si wafer, The measured thickness of each layer was about 50 nm, 50 nm, 1800 nm, 80 nm and 2 mm for the CNT source/drain electrodes, hybrid semiconductor layer, hybrid dielectric layer, CNTs gate electrode, and SEBS substrate, respectively. Each thermal lamination process was performed in a vacuum drying oven (about −0.1 MPa) at 60 °C for 15 min, and each transfer process was conducted at room temperature. Electrical and optical characterization All electrical characteristics were measured using a Keithley 4200-SCS and a Keysight B2900A in a nitrogen-filled glovebox. UV-vis absorption spectra for organic bulk heterojunction films were measured by the UV visible spectrophotometer (UH 4150, Hitachi). For all hybrid bulk heterojunction films, the optical images were collected by an Olympus BX51 cross-polarized optical microscope; the SEM images were taken with a Hitachi S-4800 field emission scanning electron microscope; the AFM images were obtained with NanoMan VS atomic force microscopy in the tapping mode. The GIWAS data were obtained at 1W1A Diffuse X-ray Scattering Station, Beijing Synchrotron Radiation Facility (BSRF-1W1A). The NIR wavelength was performed by a Bruker VERTEX 70 v FT-IR Spectrometer. Infrared nanoimaging was conducted by an infrared scattering-type scanning near-field optical microscope (Neaspec GmbH, Germany). The differences in potential of the films were characterized by Bruker Multimode 8-HR atomic force microscope. The water (H 2 O)- and diiodomethane (CH 2 I 2 )-contact angles were acquired by a motorized drop-shape analysis system (DSA100) from KRÜSS according to the Owens-Wendt method. Furthermore, for the photoelectrical characterization, multiple light sources with wavelengths of 460, 520, 625 and 808 nm, were used to illuminate the active channel of the ISNVaTs. Photoswitching characteristics of the devices were investigated by modulating the incident illumination intensities that were determined by a calibrated Si-photodiode (818-UV, Newport). Supplementary information Supplementary Information (8.5MB, pdf) Transparent Peer Review file (1.9MB, pdf) Source data Source Data (1.9MB, xlsx) Acknowledgements This work was financially supported by the National Natural Science Foundation of China (22525506, T2441002, U22A6002 and 82151305), National Key R&D Program of China (2023YFB3609000), the Strategic Priority Research Program of CAS (XDB0520101) and the CAS Project for Young Scientists in Basic Research (YSBR-053). A portion of this work was based on the data obtained at BSRF-1W1A. The authors gratefully acknowledged the cooperation of the beamline scientists at BSRF-1W1A beamline. Author contributions C.W. contributed to this work. Y.G., Z.Z. and Y.L. proposed and supervised the project. Y.G., Z.Z. and C.W. conceived the idea. C.W. and Z.Z. designed the experiments. M.Q. and Y. B. conducted photodetection experiments. J.S. was responsible for the SNOM characterization., W.S and Yiran. L. and J.H. were involved in the film characterizations. M.Z. provided guidance on materials. Z.Z. and Y.C. were involved in the AFM characterizations. Y.B. conducted the imaging experiments. Y.G., Z.Z. and C.W. wrote the manuscript and all the authors reviewed it. Peer review Peer review information Nature Communications thanks Hae-Jin Kim, Linghai Xie, and Junliang Yang for their contribution to the peer review of this work. A peer review file is available. 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