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Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2
The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 devices. Both the seco
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