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Demonstration of Robust Chiral Edge Transport in Field-Induced Chern Insulator MnBi2Te4 Devices with Engineered Geometric Defects
Chiral edge states in Chern insulators are theoretically predicted to propagate unidirectionally along the sample boundary with inherent robustness against local perturbations, which manifests as the immunity to impurity-induced backscattering, a key factor for the development of robust, high-perfor
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