HAL (France)
open access
Controlled high-current-induced scanning tunnelling microscope modification of C60
We demonstrate controlled STM-induced modification/destruction of Ih-C60 supported on a Cu(111) surface, showing that the molecule is more resilient to high currents for bias voltages greater than ca. 3.5 V. This is due to the enhanced charge transport through the diffuse SAMO orbitals of the molecu
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