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Study of Access Region Sheet Resistance in Superlattice U-GaN HEMT and Its Compact Modeling
Superlattice GaN structures are expected to have reduced on-state resistance due to the formation of multiple twodimensional electron gas (2DEG) channels in the access regions. The U-GaN structure, which has one channel in the gate region for normally-off operation, employs regrown Si-doped vertical
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