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Cooperative STT and SOT switching in perpendicular magnetic tunnel junctions: Role of the pulse-end magnetization state
Spin--orbit torque MRAM (SOT-MRAM) is a leading candidate for next-generation nonvolatile memory, offering high speed, endurance, and architectural compatibility. However, in conventional SOT switching, the magnetization remains near the in-plane region at pulse termination, making the final state h
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