HAL (France)
open access
Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing
Abstract Memristive devices based on mixed ionic–electronic resistive switches have an enormous potential to replace today's transistor‐based memories and Von Neumann computing architectures thanks to their ability for nonvolatile information storage and neuromorphic computing. It still remains uncl
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