HAL (France)
open access
Kinetic Monte Carlo simulations of Ge–Sb–Te alloy crystallization in confined PCRAM cells
Abstract Atomic-scale kinetic Monte Carlo simulations based on the GST * model were performed aiming to simulate the microstructure evolution of a 50 nm-wide phase-change memory cell based on a Ge-rich Ge–Sb–Te (GST) alloy during SET/RESET cycling. Simulations were performed considering two cases: a
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