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Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GO, or GaAsxP1-x. n-Type tunnelling diodes have been fabricated and the symmetry in the current-voltage (I-V) characteristics, as well as the pe
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