Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb

[2503.13850] Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb Skip to main content Search Submit Donate Log in Search arXiv Press Enter to search · Advanced search Condensed Matter > Materials Science arXiv:2503.13850 (cond-mat) [Submitted on 18 Mar 2025 ( v1 ), last revised 6 Nov 2025 (this version, v4)] Title: Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb Authors: Long Zhang , Guangxin Ni , Junjie He , Guoying Gao View a PDF of the paper titled Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb, by Long Zhang and 3 other authors View PDF Abstract: Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs). However, room temperature (RT) altermagnet-based MTJs with tunable tunneling magnetoresistance (TMR) or electroresistance (TER) modulated by multiferroicity remain largely unexplored. Here, we propose an experimentally fabricable above-RT multiferroic MTJ, comprising an altermagnetic metal, ferroelectric barrier, and ferromagnetic metal-epitomized by a CrSb/In2Se3/Fe3GaTe2 heterostructure. Our calculations with first-principles and nonequilibrium Green function method indicate that the architecture enables magnetically switchable TER, electrically tunable TMR, and dual-mode controllable spin filtering. To disentangle the roles of ferroelectricity and the tunnel barrier, nonferroelectric Sb2Se3 and a vacuum gap are exploited as control cases. Remarkably, the system achieves TMR up to 2308%, TER of 707%, and near-perfect spin filtering efficiency. Both TMR and TER are considerable for CrSb/In2Se3/Fe3GaTe2 with either Cr or Sb interface. The transport performance is robust under bias voltage. These findings demonstrate the above-RT multiferroic altermagnet-based MTJs and highlight their exciting potential as a versatile platform for next-generation spin dynamics, magnetic sensing, and quantum logic nanodevices. Comments: 36 pages, 7 figures, and 4 tables Subjects: Materials Science (cond-mat.mtrl-sci) ; Applied Physics (physics.app-ph); Computational Physics (physics.comp-ph) Cite as: arXiv:2503.13850 [cond-mat.mtrl-sci] (or arXiv:2503.13850v4 [cond-mat.mtrl-sci] for this version) https://doi.org/10.48550/arXiv.2503.13850 Focus to learn more arXiv-issued DOI via DataCite Journal reference: Physical Review B, 2025, 112(6), 064401 Related DOI : https://doi.org/10.1103/j559-slg4 Focus to learn more DOI(s) linking to related resources Submission history From: Long Zhang [ view email ] [v1] Tue, 18 Mar 2025 02:48:43 UTC (2,865 KB) [v2] Mon, 23 Jun 2025 11:56:37 UTC (2,878 KB) [v3] Tue, 12 Aug 2025 00:22:52 UTC (5,793 KB) [v4] Thu, 6 Nov 2025 03:17:41 UTC (5,793 KB) Full-text links: Access Paper: View a PDF of the paper titled Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb, by Long Zhang and 3 other authors View PDF view license Current browse context: cond-mat.mtrl-sci < prev | next > new | recent | 2025-03 Change to browse by: cond-mat physics physics.app-ph physics.comp-ph References & Citations NASA ADS Google Scholar Semantic Scholar export BibTeX citation Loading... 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