Lund University Publications
metadata only
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Electrical properties of functionalized nanowire field effect transistors#1361772
- Energy-Level Manipulation in Novel Indacenodithiophene-Based Donor–Acceptor Polymers for Near-Infrared Organic Photodetectors#1235283
- Environmentally stable and stretchable polymer electronics enabled by surface-tethered nanostructured molecular-level protection#389974
- Innovative Poly(vinyl alcohol) (PVA)-Based Nanolayered Films: Balancing Mechanical and Gas Barrier Properties#137647
- Field-Effect Transistors Based on ZnO Nanowires#1361909
Record · ID 1313084
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive