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Revealing New Leakage Paths in GAAFETs using Predictive First-Principles Simulations
Gate-All-Around Field-Effect Transistors (GAAFETs) are emerging as successors to Fin Field-Effect Transistors (FinFETs) and are central to continued scaling at advanced semiconductor nodes. Despite their improved electrostatic control, recent measurements show that the drain current in GAAFETs devia
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