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Nucleation at the GST--oxide interface and beam-driven ordering in amorphous Ge--Sb--Te: HAADF, EDS and electron pair distribution functions across a 4D-STEM dose series

Kumar, Mridul et al.
arXiv (All) · Papers
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materials-science
Where crystal nuclei form in amorphous phase-change materials decides how they switch. We study six successive 4D-STEM scans, with simultaneous HAADF and EDS data, of a magnetron-sputtered Ge-Sb-Te (GST) film, restricted to the GST layer and its interface with the oxide beneath it. Nucleation sites
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