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Direct growth of crack-free stoichiometric silicon nitride on sapphire for wide-band photonics
Low-loss stoichiometric silicon nitride on oxidized silicon has emerged as the major wide-band photonics platform for nonlinear and quantum photonics. These films, deposited by low-pressure chemical vapor deposition (LPCVD), are well known to have around 1000 MPa of residual tensile stress, which of
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