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Vacancy-Enhanced $N-N$ Bonding and Deep Level Complex Defect Formation in $β-Ga_2O_3$
Nitrogen implantation can make $β-Ga_2O_3$ semi-insulating, but the atomic origin responsible for carrier trapping remains unresolved. Here, hybrid density functional theory is used to examine complexes derived from an interstitial-substitutional N pair, $N_{i9}-N_{OI}$, and effects of nearby O and
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