HAL (France)
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ACM3 – An Advanced Compact MOSFET Model for Analog IC Design and Simulation
This paper presents ACM3, an advanced compact MOSFET model that extends the design-oriented ACM2 formulation by introducing gate-voltage dependencies for the slope factor n, the drain-induced barrier lowering (DIBL) coefficient σ, and inversion charge dependence for the specific current IS . ACM3 pr
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