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Anomalous hopping regime at Mott transition from disordered semiconductor to disordered metal in Si-doped Ga<sub>2</sub>O<sub>3</sub>

F. Egyenes et al.
HAL (France) · Papers · License: Open Access
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Mott transition, Anomalous variable-range hopping, 1, 0, Anderson localization, 2, Β- Gasub2/subOsub3/sub
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Record · ID 137447
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