DataCite
metadata only
Ferroelectric gate on AlGaN/GaN heterostructures
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric random access memory, FeRAM, which allows for hig
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing#1235433
- Ferroelectric-Enhanced Ultrafast Nonvolatile Floating-Gate Memory#440502
- All-Optical Control of Interfacial Polarization in MoS$_2$/WSe$_2$ Heterobilayers#1109129
- Ferroelastic domain switching by ultrafast photoinduced strain#924216
- Ferroelastic domain switching by ultrafast photoinduced strain#919985
Record · ID 1375226
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive