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Role of Local Structural Variation in X-ray Photoelectron Spectrum of Silicon Oxide Interfaces
We show that the broad X-ray photoelectron lines of silicon oxide on silicon arise from a continuous statistical distribution of core-level binding energies. Statistical simulations spanning compositions from Si to SiO$_2$ reproduce the full extent of this broadening, reaching 5 eV for SiO$_{1.0}$ ,
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